Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks
نویسندگان
چکیده
منابع مشابه
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3...
متن کاملSilicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier laye...
متن کاملAtomic layer deposited high-k nanolaminate capacitors
Al2O3–Ta2O5 nanolaminate films were prepared via atomic layer deposition (ALD) on silicon with a single overall composition and thickness, but with a varying number of Al2O3/Ta2O5 bilayers. The composition of the films was roughly 57% Al2O3 and 43% Ta2O5 and the total film thickness was held at 58 nm, while the number of bilayers was varied from 3 to 192 by changing the target bilayer thickness...
متن کاملGrain boundary structures of atomic layer deposited
Grain boundary plays an important role in determining the physical properties and chemical stability of the materials. In particular, the structures of grain boundaries in atomic layer deposited TiN film may be one of the main factors to dominate the reliability and performance of ULSI devices with multilayer structure of Cu-based interconnects. In this work, the characteristics of grain bounda...
متن کاملHigh-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the f...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2020
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2020.146015